R SEMICONDUCTOR
SC0806
SILICON CARBIDE
SCHOTTKY DIODE Reverse Voltage - 600 Volts
Forward Current - 8.
0Amperes
DESCRIPTION
SIC
Schottky Diode has no switching loss,provides improved system efficiency against Si diodes by utilizing new semiconductor material-Silicon Carbide,enables higher operating frequency, and helps increasing power density and reduction of system size /cost.
Its high reliability ensures robust operation during surge or over-voltage conditions.
FEATURES
Max Junction Temperature 175°C High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery
MECHANICAL DATA
Case: JEDEC TO-22OAC Molding compound meets UL94V-0 fl...