YJL2312A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect
Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at VGS=4.
5V) ● RDS(ON)( at VGS=2.
5V) ● RDS(ON)( at VGS=1.
8V)
20V
6.
8A ＜18 mohm ＜22 mohm ＜39 mohm
General Description
● Trench Power LV MOSFET technology
● High Power and current handing capability
Applications
● PWM application
● Load switch
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
VDS 20 V
Gate-source Voltage Drain Current Pulsed Drain Current A
TA=25℃ @ Steady State TA=70℃ @ Steady State
VGS ID IDM
±10 6.
8 5.
4
27
V A A
Total Power Dissipation @ TA=25℃
PD 1.
2 W
Thermal Resistance Junction-to-Am...