Features * Glass sealed envelope * High speed * High reliability * High-speed switching 1SS133S Silicon Epitaxial Planar Switching Diode ABA C D Cathode Mark Maximum Ratings (TA=25℃ unless otherwise noted) Peak Reverse Voltage Parameter DC Reverse Voltage Average Rectified Forward Current Peak Forward Current Surge Forward Current at t 1 s Power Dissipation Junction Temperature Storage Temperature Range Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 80 V Capacitance between Terminals at VR = 0.
5 V, f = 1 MHz Reverse Recovery Time at IF = 10 mA, VR = 6 V, RL = 50 Ω DO-34 INCHES MM DIM MIN MAX MIN MA...

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