ESMT SDRAM M12L2561616A (2S) 4M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y JEDEC standard 3.
3V power supply y LVTTL compatible with multiplexed address y Four banks operation y MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1, 2, 4, 8 & full page ) - Burst Type ( Sequential & Interleave ) y All inputs are sampled at the positive going edge of the system clock y Burst Read single write operation y DQM for masking y Auto & self refresh y 64ms refresh period (8K cycle) y All Pb-free products are RoHS-Compliant ORDERING INFORMATION Product ID M12L2561616A-5TG2S M12L2561616A-6TG2S M12L2561616A-7TG2S M12L2561616A-5BG2S M12L2561616A-6BG2S M12L2561616A-7BG2S Ma...

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