Part Number
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M13S64164A-6BG2Y |
Manufacturer
|
ESMT |
Description
|
1M x 16 Bit x 4 Banks Double Data Rate SDRAM |
Published
|
Mar 25, 2019 |
Detailed Description
|
ESMT
M13S64164A (2Y)
DDR SDRAM
1M x 16 Bit x 4 Banks Double Data Rate SDRAM
Features
z Double-data-rate architecture...
|
Datasheet
|
M13S64164A-6BG2Y
|
Overview
ESMT
M13S64164A (2Y)
DDR SDRAM
1M x 16 Bit x 4 Banks Double Data Rate SDRAM
Features
z Double-data-rate architecture, two data transfers per clock cycle
z Bi-directional data strobe (DQS)
z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition z Four bank operation z CAS Latency : 2, 2.
5, 3 z Burst Type : Sequential and Interleave z Burst Length : 2, 4, 8 z All inputs except data & DM are sampled at the rising edge of the system clock (CLK) z Data I/O transitions on both edges of data strobe (DQS) z DQS is edge-aligned with data for READs; center-aligned with data for WRITEs z Data mask (DM) for write masking only z VDD = 2.
5V ± 0.
2V, VDDQ = 2.
5...
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