SPN3004
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN3004 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
FEATURES 30V/96A,RDS(ON)=4.
2mΩ@VGS=10V 30V/96A,RDS(ON)=6.
0mΩ@VGS=4.
5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability TO-252-2L package design
APPLICATIONS MB/VGA/Vcore...