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Part Number
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SFTN2906 |
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Manufacturer
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Winning Team |
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Description
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N-Channel MOSFET |
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Published
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Apr 1, 2019 |
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Detailed Description
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SFTN2906
N-Channel Enhancement Mode Power MOSFET
Drain Gate
Source
TO-220F Plastic Package 1.Gate 2.Drain 3.Source
Ab...
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Datasheet
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SFTN2906
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Overview
SFTN2906
N-Channel Enhancement Mode Power MOSFET
Drain Gate
Source
TO-220F Plastic Package 1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current at VGS = 10 V
TC = 25℃ TC = 100℃
Peak Drain Current
TC = 25℃
Power Dissipation
Single Pulse Avalanche energy at ID = 84 A , RGS = 25 Ω
TC = 25℃
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID
IDM Ptot EAS TJ, Tstg
Thermal Characteristics Parameter
Maximum Thermal Resistance from Juntion to Case
Symbol RθJC
Value 60 ± 20 84 59 336 38 140
- 55 to + 150
Max.
3.
9
Unit V V A A W mJ ℃
Unit K/W
Winning Team
Dated: 24/11/2017
SFTN2906
Characteristics at TJ = ...
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