Part Number
|
SFTN6011 |
Manufacturer
|
Winning Team |
Description
|
N-Channel MOSFET |
Published
|
Apr 1, 2019 |
Detailed Description
|
SFTN6011
N-Channel Enhancement Mode Power MOSFET
Drain Gate
Source
TO-220FB Plastic Package 1.Gate 2.Drain 3.Source
Ab...
|
Datasheet
|
SFTN6011
|
Overview
SFTN6011
N-Channel Enhancement Mode Power MOSFET
Drain Gate
Source
TO-220FB Plastic Package 1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings Parameter
Gate-Source Voltage
Drain Current Peak Drain Current
TC = 25℃ TC = 100℃
Power Dissipation
TC = 25℃
Operating Junction and Storage Temperature Range
Symbol VGS
ID
IDM Ptot TJ, Tstg
Value ± 20
11 7 22
125 - 55 to + 150
Unit V
A
A W ℃
Thermal Characteristics Parameter
Maximum Thermal Resistance from Juntion to Case Maximum Thermal Resistance from Juntion to Ambient
Symbol RθJC RθJA
Max.
1 62
Unit ℃/W ℃/W
Winning Team
Dated: 03/05/2017
SFTN6011
Characteristics at TC = 25℃ unless otherwise specified Parameter
Drain-Source Breakd...
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