SFTN3910R N-Channel Enhancement Mode MOSFET Drain Gate Source 1.
Gate 2.
Drain 3.
Source TO-252 Plastic Package Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Peak Drain Current 1) Avalanche energy,single pulse 2) Avalanche current, single pulse 2) Power Dissipation Operating Junction Temperature Range Storage Temperature Range TC = 25℃ TC = 100℃ TC = 25℃ Symbol VDS VGS ID IDM EAS IAS PD TJ Tstg Value 30 ±20 45 28 180 13 16 33 - 55 to 150 - 55 to 150 Unit V V A A mJ A W ℃ ℃ Thermal Characteristics Parameter Thermal Resistance from Juntion to Ambient Thermal Resistance from Juntion to Case 1) Repetitive Rating : Pulsed width limited by max...

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