Part Number
|
F59L1G81MB-25TG2M |
Manufacturer
|
ESMT |
Description
|
1 Gbit (128M x 8) 3.3V NAND Flash Memory |
Published
|
Apr 2, 2019 |
Detailed Description
|
ESMT
Flash
FEATURES
Voltage Supply: 3.3V (2.7V~3.6V) Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Reg...
|
Datasheet
|
F59L1G81MB-25TG2M
|
Overview
ESMT
Flash
FEATURES
Voltage Supply: 3.
3V (2.
7V~3.
6V) Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.
) - Serial Access: 25ns (Min.
) (3.
3V) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time - Program time: 300us - typical - Block Erase time: 4ms - typical Command/Address/Data Multiplexed I/O Port Hardware Data Protection - Program/Erase Lockout During Power Transitions
F59L1G81MB (2M)
1 Gbit (128M x 8) 3.
3V NAND Flash Memory
Reliable CMOS Floating Gate Technology - ECC Req...
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