Part Number
|
F59D1G81MA-45BCG2L |
Manufacturer
|
ESMT |
Description
|
1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory |
Published
|
Apr 2, 2019 |
Detailed Description
|
ESMT
Flash
FEATURES
z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - ...
|
Datasheet
|
F59D1G81MA-45BCG2L
|
Overview
ESMT
Flash
FEATURES
z Voltage Supply: 1.
8V (1.
7 V ~ 1.
95V) z Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit z Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word z Page Read Operation - Page Size: (2K + 64) Byte (x8)
Page Size: (1K + 32) Word (x16) - Random Read: 25us (Max.
) - Serial Access: 45ns (Min.
) z Memory Cell: 1bit/Memory Cell z Fast Write Cycle Time - Program time: 350us (Typ.
) - Block Erase time: 3.
5ms (Typ.
) z Command/Address/Data Multiplexed I/O Port...
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