Part Number
|
F50D1G41LB-66YG2ME |
Manufacturer
|
ESMT |
Description
|
1.8V 1 Gbit SPI-NAND Flash Memory |
Published
|
Apr 2, 2019 |
Detailed Description
|
ESMT
Flash
(Preliminary)
F50D1G41LB (2M)
1.8V 1 Gbit SPI-NAND Flash Memory
PRODUCT LIST
Parameters VCC Width Frequenc...
|
Datasheet
|
F50D1G41LB-66YG2ME
|
Overview
ESMT
Flash
(Preliminary)
F50D1G41LB (2M)
1.
8V 1 Gbit SPI-NAND Flash Memory
PRODUCT LIST
Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Power-up Ready Time Max Reset Busy Time Note: 1.
x2 PROGRAM operation is not defined.
Values
1.
8V x1, x21, x4 50/66MHz
1-bit 20/15ns 1ms (maximum value) 1ms (maximum value)
FEATURES
Voltage Supply: 1.
8V (1.
7V~1.
95V)
Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit
Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte
Page Read Operation - Page Size: (2K + 64) Byte - Read from Cell to Register with Internal ECC: 100us
Memory Cell: 1bit/Memory Cell Support SPI...
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