Part Number
|
F50L2G41LB-104YG2ME |
Manufacturer
|
ESMT |
Description
|
3.3V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory |
Published
|
Apr 2, 2019 |
Detailed Description
|
ESMT
Flash
PRODUCT LIST
Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up...
|
Datasheet
|
F50L2G41LB-104YG2ME
|
Overview
ESMT
Flash
PRODUCT LIST
Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Time Note: 1.
x2 PROGRAM operation is not defined.
F50L2G41LB (2M)
3.
3V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory
Values 3.
3V
x1, x21, x4 104MHz
1-bit 9.
6ns 104MT/s 1ms (maximum value) 1ms (maximum value)
FEATURES
Voltage Supply: 3.
3V (2.
7V~3.
6V) Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Size: (2K + 64) Byte - Read from Cell to Register with Internal ECC: 100us Memory Cell: 1...
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