PE29100 Document Category: Product Specification UltraCMOS® High-speed FET Driver, 33 MHz Features • High- and Low-side FET drivers • Dead-time control • Fast propagation delay, 8 ns • Tri-state enable mode E • Sub-nanosecond rise and fall time • 2A/4A peak source/sink current • Package – Flip chip Applications • DC–DC conversions • AC–DC conversions • Wireless power • Class D amplifiers IF Product Description The PE29100 integrated high-speed driver is designed to control the gates of external power devices, such as L enhancement mode gallium nitride (eGaN®) FETs.
The outputs of the PE29100 are capable of providing switching transition speeds in the sub-nanosecond range for hard switchin...

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