Silan Microelectronics
SVF2N60RD/M/MJ_Datasheet
2A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF2N60RD/M/MJ is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary FCellTM high-voltage planar VDMOS technology.
The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
2A,600V,RDS(on)(typ)=3.
7@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capabil...