Part Number
|
MFIRF7N65 |
Manufacturer
|
Global Semiconductor |
Description
|
POWER MOSFET |
Published
|
Apr 14, 2019 |
Detailed Description
|
MFIRF7N65 MCIRF7N65
ID = 7.0A VDS = 650V RDS(on)MAX = 1.5Ω
Major Ratings and Characteristics
Characteristics
Values
...
|
Datasheet
|
MFIRF7N65
|
Overview
MFIRF7N65 MCIRF7N65
ID = 7.
0A VDS = 650V RDS(on)MAX = 1.
5Ω
Major Ratings and Characteristics
Characteristics
Values
Units
ID 7.
0 A IDM 28.
0 A VDS 650 V
VGS TJ T storage
±30 150 -55 ~150
V
℃ ℃
POWER MOSFET
Description/ Features The MCIRF7N65 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
The new energy efficient design also offers a drainto-source diode with a fast recovery time.
Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.
● 150℃ Tj operation ● Low Power Loss & Low cost ●Fast Switching ●RoHS Compliant
Case Styles
Ordering Info...
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