|
Part Number
|
MJIRF2N65 |
|
Manufacturer
|
Global Semiconductor |
|
Description
|
POWER MOSFET |
|
Published
|
Apr 14, 2019 |
|
Detailed Description
|
MCIRF2N65 MFIRF2N65 MKIRF2N65 MJIRF2N65
ID = 2.0A VDS = 650V RDS(on)MAX = 5.0Ω
Major Ratings and Characteristics
Char...
|
|
Datasheet
|
MJIRF2N65
|
Overview
MCIRF2N65 MFIRF2N65 MKIRF2N65 MJIRF2N65
ID = 2.
0A VDS = 650V RDS(on)MAX = 5.
0Ω
Major Ratings and Characteristics
Characteristics
Values
Units
ID 2.
0 A IDM 8.
0 A VDS 650 V
VGS TJ T storage
±30 150 -55 ~150
V
℃ ℃
POWER MOSFET
Description/ Features The MCIRF2N65 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
The new energy efficient design also offers a drainto-source diode with a fast recovery time.
Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.
● 150℃ Tj operation ● Low Power Loss & Low cost ●Fast Switching ●RoHS Compliant
Case Sty...
Similar Datasheet