Part Number
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NVD5C434N |
Manufacturer
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ON Semiconductor |
Description
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Power MOSFET |
Published
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Apr 16, 2019 |
Detailed Description
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NVD5C434N
Power MOSFET
40 V, 2.1 mW, 163 A, Single N−Channel
Features
• Low RDS(on) to Minimize Conduction Losses • Low...
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Datasheet
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NVD5C434N
|
Overview
NVD5C434N
Power MOSFET
40 V, 2.
1 mW, 163 A, Single N−Channel
Features
• Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC (Notes 1 & 3)
Power Dissipation RqJC (Note 1)
Steady State
TC = 25°C TC = 100°C TC = 25°C TC = 100°C
Continuous Drain Current RqJA (Notes 1, 2 & 3)
Power Dissipation RqJA (Notes 1 & 2)
TA = 25°C
Steady TA = 100°C State TA = 25°C
TA = 100°C
Pulsed Drain Cu...
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