MITMSUITBSIUSBHISHINI TEINLTLEIGLLEINGTENPOT WPOEWR EMROMDUOLDEUSLES PM100PCMS10D0C1S2D0120 FLAFTL-ABTA-SBEASTEYPTEYPE INSIUNLSAUTLEADTEPDACPKAACGKAEGE PM100CSD120 FEATURE a) Adopting new 4th generation planar IGBT chip, which per- formance is improved by 1µm fine rule process.
b) Using new Diode which is designed to get soft reverse recovery characteristics.
c) Keeping the package compatibility.
The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM .
• 3φ 100A, 1200V Current-sense IGBT for 15kHz switching • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for overcurrent, short-circuit, over-tempe...

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