Silicon RF Power MOS FET (Discrete)
RD02LUS2
RoHS Compliance, Silicon MOSFET Power
Transistor 470MHz, 2W, 3.
6V
DESCRIPTION
RD02LUS2 is a MOS FET type
transistor designed for VHF/UHF RF driver device.
OUTLINE DRAWING
FEATURES
1.
High Power Gain and High Efficiency Pout2.
0W, Gp=10dB, Drain Effi.
=60%typ @ f=470MHz, VDS=3.
6V, Idq=140mA, Pin=0.
2W
2.
Integrated gate protection diode
APPLICATION
For driver stage of high power amplifiers in VHF/UHF Band mobile radio sets.
RoHS COMPLIANT
RD02LUS2-501, T513 is EU RoHS compliant.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.
Lead in high mel...