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Part Number
|
RD100HHF1C |
|
Manufacturer
|
Mitsubishi |
|
Title
|
Silicon RF Power MOS FET |
|
Description
|
RD100HHF1C is a MOS FET type transistor specifically designed for HF High power amplifiers applicati...
|
|
Features
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High power and High Gain: Pout100W, Gp11.5dB @VDD=12.5V,f=30MHz
High Efficiency: 60%typ.on HF Band
17.0± 0.5
4-C2
1
...
|
|
Published
|
Apr 16, 2019 |
|
Datasheet
|
RD100HHF1C PDF File
|
Features
High power and High Gain: Pout100W, Gp11.5dB @VDD=12.5V,f=30MHz
High Efficiency: 60%typ.on HF Band
17.0± 0.5
4-C2
1
2
9.6± 0.3 10.0± 0.3
3
5.0±0.3 18.5±0.3
2-R1.6 ± 0.15
3.3± 0.2
APPLICATION
For output stage of high power amplifiers in HF Ba...
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