SEMICONDUCTOR
RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM
December 1995
30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs
Features
• 30A, 50V • rDS(ON) = 0.
065Ω • Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve • +175oC Operating Temperature
Description
The RFG30P05, RFP30P05, RF1S30P05, and RF1S30P05SM P-Channel power MOSFETs are manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switching
regulators, switching converters, motor drivers,...