PFP60R180 / PFF60R180 PFP60R180 / PFF60R180 N-Channel Super Junction MOSFET FEATURES  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested  RoHS APPLICATION  Power Factor Correction(PFC)  Switched mode power supply (SMPS)  Uninterruptible Power Supply (UPS) BVDSS = 600 V RDS(on) = 0.
15 Ω ID = 21 A TO-220 G DS Drain  Gate  ● ◀▲ ● ●  Source TO-220F G DS Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter PFP60R1 8 0 PFF60R1 8 0 VDS ID IDM(pulse) VGS Drain-Source Voltage (VGS=0V) Drain Current – Continuous (TC = 25℃) Drain Current...

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