SPN9926B
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN9926B is the Dual N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
FEATURES 20V/6.
0A,RDS(ON)=33mΩ@VGS=4.
5V 20V/5.
0A,RDS(ON)=38mΩ@VGS=2.
5V Super high density cell design for extremely low
RDS(ON) Exceptional on-resistance and maximum DC
current capability SOP–8 package design
APPLICATIONS Power Man...