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Part Number
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HYG046N04LQ1V |
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Manufacturer
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HUAYI |
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Description
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N-Channel MOSFET |
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Published
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Apr 22, 2019 |
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Detailed Description
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HYG046N04LQ1D/U/V
N-Channel Enhancement Mode MOSFET
Feature
40V/75A RDS(ON)= 4.4mΩ(typ.)@VGS = 10V RDS(ON)= 6.1mΩ(ty...
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Datasheet
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HYG046N04LQ1V
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Overview
HYG046N04LQ1D/U/V
N-Channel Enhancement Mode MOSFET
Feature
40V/75A RDS(ON)= 4.
4mΩ(typ.
)@VGS = 10V RDS(ON)= 6.
1mΩ(typ.
)@VGS = 4.
5V
100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available
(RoHS Compliant)
Pin Description
GDS TO-252-2L
GDS
GDS
TO-251-3L
TO-251-3S
Applications
Switching Application Power Management for DC/DC Battery Protection
Ordering and Marking Information
N-Channel MOSFET
D
G046N04L
XXXYWXXXXX
U
G046N04L
XXXYWXXXXX
V
G046N04L
XXXYWXXXXX
Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S
Date Code XXXYWXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation...
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