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Part Number
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HYG080N03LA1S |
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Manufacturer
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HUAYI |
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Description
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N-Channel MOSFET |
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Published
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Apr 22, 2019 |
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Detailed Description
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HYG080N03LA1S
N-Channel Enhancement Mode MOSFET
Feature
30V/12A RDS(ON)=7.3mΩ(typ.)@VGS = 10V RDS(ON)=10.1mΩ(typ.)@V...
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Datasheet
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HYG080N03LA1S
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Overview
HYG080N03LA1S
N-Channel Enhancement Mode MOSFET
Feature
30V/12A RDS(ON)=7.
3mΩ(typ.
)@VGS = 10V RDS(ON)=10.
1mΩ(typ.
)@VGS = 4.
5V
100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available
(RoHS Compliant)
Pin Description
SOP8L
Applications
Power Management for DC/DC Switching Application Battery Protection
Ordering and Marking Information
S
G080N03
XYWXXXXXX
N-Channel MOSFET
Package Code S: SOP8L Date Code XYWXXXXXX
Note:HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNationfinish;which are fully compliant with RoHS.
HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-ST...
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