General Description
WSD8823DN22 combines a P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage
schottky diode.
the tiny and thin outline saves PCB consumption.
Applications
z Bidirectional blocking switch; z DC-DC conversion applications; z Li-battery charging;
Schottky
VR 20V
VF 410mV@1A
IO 2A
WSD8823DN22
P-Ch MOSFET
Product Summery
VDSS -20V
RDSON(typ.
) 60mΩ@-4.
5V
75mΩ@-2.
5V 105mΩ@-1.
8V
ID -3.
4A
DFN2X2-6L Pin Configuration
Absolute Maximum Ratings (TA = 25℃ Unless Otherwise Noted)
Symbol VDS VGS
ID@Tc=25℃ IDM
VR IF PD TSTG,TJ RθJA RθJC
Parameter Drain-Source Voltage Gate-Source Voltage Continuous ...