TSB12N10A Wuxi Unigroup Microelectronics Company 100V N-Channel DTMOS FEATURES  Trench Power DTMOS Technology  Low RDS(ON)  Low Gate Charge  Optimized for Fast-switching Applications APPLICATIONS  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Package Marking TSB12N10A TO-263 12N10A Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage Single Pulse Avalanche Energy (note2) Avalanche Current (note1) Power Dissipation (TC = 25ºC) ...

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