Part Number
|
H2305N |
Manufacturer
|
HI-SINCERITY |
Description
|
P-Channel Enhancement-Mode MOSFET |
Published
|
Apr 30, 2019 |
Detailed Description
|
HI-SINCERITY
MICROELECTRONICS CORP.
H2305N
P-Channel Enhancement-Mode MOSFET (-20V, -4.5A)
Features
• RDS(on)58mΩ@VGS=-...
|
Datasheet
|
H2305N
|
Overview
HI-SINCERITY
MICROELECTRONICS CORP.
H2305N
P-Channel Enhancement-Mode MOSFET (-20V, -4.
5A)
Features
• RDS(on)58mΩ@VGS=-4.
5V, ID=-4.
2A • RDS(on)71mΩ@VGS=-2.
5V, ID=-2A • Simple Drive Requirement • Small Package Outline • ISurface Mount Device
Spec.
No.
: MOS200807 Issued Date : 2008.
11.
12 Revised Date :2009,12,15 Page No.
: 1/5
H2305N Pin Assignment & Symbol
3 12
3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain
Source
Gate
Drain
Description
The Advanced Power MOSFETS from APEC provide the designer with the best combination of fast switching low on-resistance and cost-effectiveness.
The SOT-23 package is universally preferred for all commercial-industrial surface mo...
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