HI-SINCERITY
MICROELECTRONICS CORP.
Spec.
No.
: HA200221 Issued Date : 2002.
08.
01 Revised Date : 2004.
06.
18 Page No.
: 1/5
HTIP112A
SILICON
NPN POWER DARLINGTON
TRANSISTOR
• Monolithic Darlington Configuration • Integrated Antiparallel Collector-Emitter Diode
Description
The devices is a sillcon Epitaxial-Base
NPN transistor in monolithic Darlington configuration mounted in TO-92 plastic package.
It is intented for use in linear and switching applications.
TO-92
Applications
Linear and Switching Industrial Equipment
Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO
IC ICM IB Ptot Tstg Tj
Parameter Collector-Base Voltage(IE=0) Collector-Emitter Voltage(IB=0) Emitter-Base Voltage(IC=0) Co...