Part Number
|
IS35ML02G084 |
Manufacturer
|
ISSI |
Description
|
2Gb(x8) 3.3V NAND FLASH MEMORY |
Published
|
Apr 30, 2019 |
Detailed Description
|
IS34ML02G084 IS35ML02G084
2Gb SLC-4b ECC
3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE
2Gb(x8) 3.3V NAND FLASH MEMO...
|
Datasheet
|
IS35ML02G084
|
Overview
IS34ML02G084 IS35ML02G084
2Gb SLC-4b ECC
3.
3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE
2Gb(x8) 3.
3V NAND FLASH MEMORY with 4b ECC
IS34/35ML02G084
FEATURES
Flexible & Efficient Memory Architecture
- Organization: 256Mb x8 - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell
Highest performance - Read Performance
- Random Read: 25us (Max.
) - Serial Access: 25ns (Max.
)
- Write Performance
- Program time: 300us - typical - Block Erase time: 3ms – typical
Low Power with Wide Temp.
Ranges - Single 3.
3V (2.
7V to 3.
6V) Voltage Supply - 10 mA Active Read Current - 8 µA Standby...
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