STPSC4H065DLF
Datasheet
650 V power
Schottky silicon carbide diode
Product status link STPSC4H065DLF
Product summary
Symbol
Value
IF(AV)
4A
VRRM
650 V
VF(typ.
)
1.
38 V
T j(max.
)
175 °C
Product label
Features
• Less than 1 mm height package • High creepage package • No or negligible reverse recovery • Temperature independent switching behavior • High forward surge capability • Low drop forward voltage • Power efficient product • ECOPACK2 compliant component
Applications
• Switch mode power supply • Boost PFC • Bootstrap diode • LLC clamping function • High frequency inverter applications
Description
This 4 A, 650 V, SiC diode is an ultra-high performance power
Schottky diode.
It ...