Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features  175 °C maximum operating temperature  Temperature independent switching performance  Gate oxide free SiC switch  Integrated SiC Schottky Rectifier  Positive temperature coefficient for easy paralleling  Low intrinsic device capacitance  Low gate charge Package  RoHS Compliant S D S G GA50SICP12-227 VDS VDS(ON) ID RDS(ON) = = = = 1200 V 1.
4 V 50 A 28 mΩ Advantages  Low switching losses  High circuit efficiency  High temperature operation  High short circuit withstand capability  Reduced cooling requirements  Reduced system size SOT-227 Applications  Down Hole Oil Drilling, Geothermal Instrumentation ...

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