NV6117 QFN 5 x 6 mm Simplified schematic 1.
Features GaNFast™ Power IC • Monolithically-integrated gate drive • Wide logic input range with hysteresis • 5 V / 15 V input-compatible • Wide VCC range (10 to 30 V) • Programmable turn-on dV/dt • 200 V/ns dV/dt immunity • 650 V eMode GaN FET • Low 120 mΩ resistance • Zero reverse recovery charge • 2 MHz operation Small, low-profile SMT QFN • 5 x 6 mm footprint, 0.
85 mm profile • Minimized package inductance Environmental • RoHS, Pb-free, REACH-compliant 650 V GaNFast™ Power IC 2.
Description The NV6117 is a 650 V GaNFast™ power IC, optimized for high frequency, soft-switching topologies.
Monolithic integration of FET, drive and logic creates ...

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