MOSFETs Silicon N-channel MOS (U-MOS-H)
TPH1R104PB
1.
Applications
• Automotive • Motor Drivers • Switching Voltage
Regulators
2.
Features
(1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 0.
95 mΩ (typ.
) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 2.
0 to 3.
0 V (VDS = 10 V, ID = 0.
5 mA)
3.
Packaging and Internal Circuit
TPH1R104PB
SOP Advance(WF)
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2015-2020 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2018-03
2020-06-24 Rev.
7.
0
TPH1R104PB
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)...