Ka Band Power GaAs MESFET Chip AFM06P2-000 Features s 22.
5 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC–40 GHz s 0.
25 µm Ti/Pd/Au Gates s Passivated Surface s Through-Substrate Via Hole Grounding 0.
327 mm 0.
655 mm Chip thickness = 0.
1 mm.
Drain 0.
395 mm 0.
110 mm Gate 0.
110 mm Description The AFM06P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.
25 µm and a total gate periphery of 600 µm.
The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits.
It employs Ti...

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