Part Number
|
AFM06P3-213 |
Manufacturer
|
Alpha Industries |
Description
|
Power GaAs MESFET |
Published
|
Mar 23, 2005 |
Detailed Description
|
Ka Band Power GaAs MESFET Chips
AFM06P3-212, AFM06P3-213 Features
s 22 dBm Output Power @ 18 GHz s High Associated Gain,...
|
Datasheet
|
AFM06P3-213
|
Overview
Ka Band Power GaAs MESFET Chips
AFM06P3-212, AFM06P3-213 Features
s 22 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC–18 GHz s 0.
25 µm Ti/Pd/Au Gates s Passivated Surface
Source 212 Gate Drain Source Gate Source Drain 213 Source
Description
The AFM06P3-212, 213 are high performance power GaAs MESFET chips in an industry standard ceramic micro-x package, having a gate length of 0.
25 µm and a total gate periphery of 600 µm.
These devices have excellent gain and power performance through 26 GHz, making them suitable for a wide range of commercial and military applications in oscillator and amplifier circuits.
They em...
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