STL12N10F7 Datasheet N-channel 100 V, 11.
3 mΩ typ.
, 12 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.
3x3.
3 package D(5, 6, 7, 8) G(4) S(1, 2, 3) Features Order code VDS RDS(on) max.
STL12N10F7 100 V 13.
3 mΩ • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 12 A 8 76 5 Applications • Switching applications 1234 AM15810v1 Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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