Features
■ Ideal for low power amplification and switching ■ Plastic-Encapsulate
transistor ■ Epitaxial planar die construction
MMDT3906 Dual
PNP Transistor
Absolute Maximum Ratings (TA=25°C unless otherwise noted）
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current-Continuous Collector Power Dissipation Thermal Resistance from Junction to Ambient Air Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC PC
RθJA
TJ TSTG
Value -40 -40 -5 -200 200
625
-55 to +150 -55 to +150
Unit V V V mA mW
℃/W
℃ ℃
SOT-363 Schematic Diagram
Electrical Characteristics (TA=25°C unless otherwise noted）
Parameter Collector-Base Breakdown Voltage C...