FFSP0665A — Silicon Carbide
Schottky Diode
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FFSP0665A
Silicon Carbide
Schottky Diode
650 V, 6 A
Features
• Max Junction Temperature 175 oC • Avalanche Rated 36 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery / No Forward Recovery
Applications
• General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits
Description
Silicon Carbide (SiC)
Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.
No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbi...