Part Number
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GS4576C09GM |
Manufacturer
|
GSI Technology |
Description
|
576Mb CIO Low Latency DRAM |
Published
|
May 29, 2019 |
Detailed Description
|
GS4576C09/18/36GM
144-Ball FBGA Commercial Temp Industrial Temp
64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM...
|
Datasheet
|
GS4576C09GM
|
Overview
GS4576C09/18/36GM
144-Ball FBGA Commercial Temp Industrial Temp
64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM (LLDRAM II)
533 MHz–300 MHz
2.
5 V VEXT 1.
8 V VDD 1.
5 V or 1.
8 V VDDQ
Features
• Pin- and function-compatible with Micron RLDRAM® II • 533 MHz DDR operation (1.
067Gb/s/pin data rate) • 38.
4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • 16M x 36, 32M x 18, and 64M x 9 organizations available • 8 banks • Reduced cycle time (15 ns at 533 MHz) • Address Multiplexing (Nonmultiplexed address option
available) • SRAM-type interface • Programmable Read Latency (RL), row cycle time, and burst
sequence length • Balanced Read and Write Latencies in order to optimize data
bu...
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