PMCM650CUNE
20 V, Common Drain N-channel Trench MOSFET
Rev.
1.
0 — 8 November 2017
Product data sheet
WLCSP6
1 Product profile
1.
1 General description
N-channel enhancement mode common-drain dual Field-Effect
Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
1.
2 Features and benefits
• Common-drain type for bi-directional current flow • Low threshold voltage • Ultra small package: 0.
98 × 1.
48 × 0.
35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection 2 kV HBM
1.
3 Applications
• Loadswitch • Battery Protection • Battery Management
1.
4 Quick reference data
Table 1.
Quick reference data Symbol Parameter
VSS sourc...