PMCM6501UPE
20 V, P-channel Trench MOSFET
3 July 2017
Product data sheet
1.
General description
P-channel enhancement mode Field-Effect
Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
2.
Features and benefits
• Low threshold voltage • Ultra small package: 0.
98 x 1.
48 x 0.
35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection 2 kV HBM
3.
Applications
• Battery switch • High-speed line driver • High-side loadswitch • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-s...