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V2P6
Vishay General Semiconductor
Surface Mount Trench MOS Barrier
Schottky Rectifier
TMBS® eSMP® Series
Top View
Bottom View
MicroSMP (DO-219AD)
Anode
Cathode
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
2A 60 V 30 A
VF at IF = 2 A (125 °C)
0.
51 V
TJ max.
Package
150 °C MicroSMP (DO-219AD)
Circuit configuration
Single
FEATURES
• Very low profile - typical height of 0.
65 mm
Available
• Ideal for automated placement
• Trench MOS
Schottky technology
• Low forward voltage drop
• Low power loss, high efficiency
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified av...