PSMN1R5-40YSD
N-channel 40 V, 1.
5 mΩ, 240 A standard level MOSFET in
LFPAK56 using NextPower-S3
Schottky-Plus technology
27 August 2019
Product data sheet
1.
General description
240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology.
This product has been designed and qualified for high performance power switching applications.
2.
Features and benefits
• 240 A continuous ID(max) rating • Avalanche rated, 100% tested at IAS = 190 A • Strong SOA (linear-mode) rating • NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery' • Low QRR, QG and QGD for high system efficiency a...