Part Number A2SHB
Manufacturer HAOHAI
Title N-Channel MOSFET
Description 3.7A, 20V N  N  N-Channel Enhancement Mode Field Effect Transistor SMD   Features  ■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V  ■High dense cell desig...
■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V  
■High dense cell design for extremely low RDS(ON)  
■Rugged and reliable  
■Lead free product is acquired  
■SOT-23 Package  
■Marking Code: A2SHB   Case Material: Molded Plastic.   UL Flammability Classification Rating 94V-0 Internal Block Diagram D HNM2302ALB(SO...

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Datasheet A2SHB PDF File

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A2SHB : SLS SEMICONDUCTOR (SHENZHEN) CO.,LTD. SOT-23 /SOT-23 Plastic-Encapsulate MOSFETS SLS2302(N-Channel Enhancement mode Field Effect Transistor) /MARKING: A2SHB /Features: 1、 ; 2、 ; /Applications: DC-DC 。 /Absolute maximum ratings(Ta=25℃) /Parameter -/Drain-Source Voltage -/Gate-Source Voltage ()/Continuous Drain Current /Power Dissipation / Thermal Resistance Junction to Ambient /Junction Temperature /Storage Temperature / Symbol VDS VGS ID PD RθJA Tj Tstg /Value 20 ±8 2.1 0.35 350 150 -55~150 /Unit V V A W ℃/mW ℃ ℃ /Electrical characteristics (Ta=25℃) /Static Characteristics - .

A2SHB : The LPM2302 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for low voltage applications, notebook computer power management and other battery powered circuits where high-side switching are needed. Ordering Information LPM2302- □ □ □ F: Pb-Free Package Type B3: SOT23-3 Features ■ 20V/3.5A, RDS(ON)=50mΩ(Typ.)@VGS=4.5V ■ 20V/3.0A, RDS(ON)=75mΩ(Typ.)@VGS=2.5V ■ Super high density cell design for extremely low RDS(ON) ■ SOT23 Package Applications  Portable Media Players  Cellular and.

A2SHB : SOT-23 (SOT-23 Field Effect Transistors) GMS2302AL N-Channel Enhancement-Mode MOS FETs N MOS ■MAXIMUM RATINGS Characteristic Symbol Drain-Source Voltage - Gate- Source Voltage - Drain Current (continuous) - Drain Current (pulsed) - Total Device Dissipation TA=25℃ 25℃ Junction BVDSS VGS ID IDM PD TJ Storage Temperature Tstg ■DEVICE MARKING GMS2302AL=A2SHB Max 20 +8 2.6 10 900 150 -55to+150 Unit V V A A mW ℃ ℃ 1 GMS2302AL ■ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted , 25℃) Characteristic Symbol Min Typ Max Drain-Source Breakdown Voltage -(ID = 250uA,VGS=0V) Gate Threshold Voltage (ID.

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