CYStech Electronics Corp.
Low Vcesat
PNP Epitaxial Planar
Transistor
BTA3513I3
Features
• Low VCE(sat) • High BVCEO • Excellent current gain characteristics • RoHS compliant package
BVCEO IC RCESAT
Spec.
No.
: C607I3 Issued Date : 2012.
02.
10 Revised Date : Page No.
: 1/9
-80V -10A 75mΩ typ.
Symbol
BTA3513I3
Outline
TO-251
B：Base C：Collector E：Emitter
BB CC E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃
Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Stor...