CYStech Electronics Corp.
Low Vcesat
PNP Epitaxial Planar
Transistor
BTB1386M3
Spec.
No.
: C815M3 Issued Date : 2005.
03.
25 Revised Date : 2014.
05.
20 Page No.
: 1/6
Features
• Low VCE(sat), VCE(sat)=-0.
25 V (typical), at IC / IB = -3A / -60mA • Excellent DC current gain characteristics • Complementary to BTD2098M3 • Pb-free lead plating and halogen-free package
Symbol
BTB1386M3
Outline
SOT-89
B：Base C：Collector E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Power Dissipation
Operating Junction and Storage Temperature Range Note : 1.
Single Pulse Pw=10ms
2.
When mounted on a 40 ×40 ×0.
7 m...