CYStech Electronics Corp.
High Voltage
PNP Epitaxial Planar
Transistor
BTB9050N3
Spec.
No.
: C619N3 Issued Date : 2012.
08.
21 Revised Date : Page No.
: 1/7
Description
• High breakdown voltage.
(BVCEO=-500V) • Low saturation voltage, typical VCE(sat) =-0.
13V at Ic/IB =-20mA/-2mA.
• Complementary to BTNA45N3 • Pb-free package
Symbol
BTB9050N3
Outline
SOT-23 C
B：Base C：Collector E：Emitter
BE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation
Thermal Resistance, Junction-to-Ambient
Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC PD
Rth,ja
Tj Tstg
Note : Device mounted o...