CYStech Electronics Corp.
General Purpose
NPN Epitaxial Planar
Transistor
BTC2882J3
BVCEO
IC
RCESAT(MAX)
Spec.
No.
: C238J3 Issued Date : 2010.
06.
23 Revised Date : 2011.
03.
08 Page No.
: 1/6
200V 1A 0.
6Ω
Features
• High breakdown voltage, BVCEO≥ 200V • Large continuous collector current capability • Low collector saturation voltage • Pb-free lead plating and halogen-free package
Symbol
BTC2882J3
Outline
TO-252(DPAK)
B：Base C：Collector E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation @TA=25℃
Power Dissipation @TC=25℃ Junction Temperature Storage Temperat...